The following is an archive of published papers associated with NCREPT over the past few years. Download is only available for NCREPT members.Click on the year for listing.

2008

  • S. S. Ang, W. D. Brown , H. Mustain, B. Rowden, J. C. Balda, and H. A. Mantooth, “Packaging Of Silicon Carbide Power Semiconductor Devices” Download
  • H. Alan Mantooth, Senior Member, IEEE, Osama Saadeh, Student Member, IEEE, Erik Johnson, Student Member, IEEE, Juan C. Balda, Senior Member, IEEE, Simon S. Ang, Senior Member, IEEE, Alexander B. Lostetter, Member, IEEE, Roberto M. Schupbach, Member, IEEE, “Solid-State Fault Current Limiters: Silicon versus Silicon Carbide” Download

2007

  • T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, S.-H. Ryu, “Silicon carbide power MOSFET model and parameter extraction sequence,” IEEE Trans. on Power Electronics, vol. 22, no. 2, pp. 353-363, Mar. 2007. Download
  • A. Medury, J. Carr, J. Balda, H. Mantooth, and T. Funaki, “Three-Level ZVS and ZVZCS Converters: A Comparative Evaluation of the Soft-Switching Regions,” Power Conversion Conference, 4 pgs., April 2007. Download
  • T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. D. Barlow, T. Kimoto, T. Hikihara, “Power conversion with SiC devices at extremely high ambient temperatures,” IEEE Trans. on Power Electronics, vol. 22, no. 4, pp. 1321-1329, July 2007. Download
  • E. Santi, L. Lu, Z. Chen, J. L. Hudgins, H. A. Mantooth, “Simulating Power Semiconductor Devices Using Variable Model Levels,” 2007 Summer Computer Simulation Conference (SCSC'07), 4 pgs., July 2007.
  • E. Santi, J. L. Hudgins, H. A. Mantooth, "Variable Model Levels for Power Semiconductor Devices,” 2007 Summer Computer Simulation Conference (SCSC'07), 4 pgs., July 2007.
  • J. Carr, D. Hotz, A. Ong, J. Balda, H. A. Mantooth, A. Agarwal, “Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources,” IEEE Industry Applications Society Meeting, 4 pgs., accepted, Oct. 2007.

2006

  • T. R. McNutt, A. R. Hefner Jr., H. A. Mantooth, J. L. Duliere, D. W. Berning, and R. Singh, “Physics-based modeling and characterization for silicon carbide power diodes,” Journal of Solid-State Electronics, Elsevier, vol. 50, issue 3, pp. 388-398, March 2006. Download
  • B. Ozpineci, M. S. Chinthavali, L. M. Tolbert, A. Kashyap, H. A. Mantooth, “A 55 kW three-phase inverter with Si IGBTs and SiC Schottky diodes,“ IEEE Applied Power Electronics Conf., 7 pgs., Dallas, TX, March 2006. Download
  • T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto and T. Hikihara, “Characterization of SiC Diodes in Extremely High Temperature Ambient,“ IEEE Applied Power Electronics Conf.,, 7 pgs., Dallas, TX, March 2006. Download
  • T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto and T. Hikihara, “Characterization of SiC JFET for Temperature Dependent Device Modeling,” IEEE Power Electronics Specialists Conf. (PESC), 7 pgs., June 2006. Download
  • H. A. Mantooth, M. M. Mojarradi, R. W. Johnson, “Emerging Capabilities in Electronics Technologies for Extreme Environments Part I – High Temperature Electronics,” IEEE Power Electronics Society Newsletter, vol. 18, no. 1, 1st quarter 2006.
  • H. A. Mantooth, M. M. Mojarradi, R. W. Johnson, “Emerging Capabilities in Electronics Technologies for Extreme Environments Part II – Low Temperature Electronics,” IEEE Power Electronics Society Newsletter, vol. 18, no. 2, 2nd quarter 2006.

2005

  • T. Funaki, J. C. Balda, J. Junghans, A. Jangwanitlert, S. Mounce, F. D. Barlow, H. A. Mantooth, T. Kimoto and T. Hikihara, “Switching Characteristics of SiC JFET and Schottky Diode in High-temperature DC-DC Power Converters,” IEICE Electronics Express, vol. 2, no. 3, pp. 97-102, Jan. 2005. Download
  • T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, F. D. Barlow, H. A. Mantooth, T. Kimoto and T. Hikihara, “Power Conversion with SiC Devices at Extremely High Ambient Temperatures,” IEEE Power Electronics Specialists Conf. (PESC), pp. 2030-2035, Recife, Brazil, June 2005. Download
  • T. Funaki, T. Kimoto, T. Hikihara, A. S. Kashyap, P. Ramavarapu, S. Mounce, J. C. Balda, and H. A. Mantooth, “Characterization of Cascode SiC JFET / Si MOSFET Devices,” International Power Electronics Conference (IPEC 2005), 6 pgs., Niigata, Japan, Apr. 4-8, 2005.

2004

  • T. R. McNutt, A. R. Hefner, H. A. Mantooth, J. L. Duliere, D. Berning, R. Singh, “Silicon carbide PiN and merged PiN schottky power diode models implemented in the Saber circuit simulator,” IEEE Trans. on Power Electronics, vol. 19, no. 3, pp. 573-581, May 2004. Download
  • T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh, “Compact Models for Silicon Carbide Power Devices,” Journal of Solid-State Electronics, Elsevier, vol. 48, no. 10-11, pp. 1757-1762, Oct.-Nov. 2004. Download
  • A. B. Lostetter, J. Hornberger, T. McNutt, S. Magan Lal, A. Mantooth, “The Application of Silicon Carbide Semiconductor Power Electronics to Extreme High-Temperature Extraterrestrial Environments,” IEEE Aerospace Conference, Big Sky, Montana, March 2004.
  • H. A. Mantooth and T. R. McNutt, “Compact Models for Silicon Carbide Power Devices,” Proc. Int. Conf. Mixed Design of Integrated Circuits and Systems (MIXDES), pp. 30-35, Szczecin, Poland, June 24-26, 2004 (invited & plenary). Download
  • A. S. Kashyap, P. L. Ramavarapu, T. R. McNutt, A. B. Lostetter and H. A. Mantooth, “Modeling Vertical Channel Junction Field Effect Devices in Silicon Carbide,” IEEE Power Electronics Specialists Conf. (PESC), pp. 3009-3014, June 2004.Download
  • A. S. Kashyap, P. L. Ramavarapu, S. Magan Lal, T. R. McNutt, A. B. Lostetter, T. Funaki and H. A. Mantooth, “Compact circuit simulation model of a silicon carbide junction field effect transistor,” IEEE Workshop on Computers in Power Electronics (COMPEL ’04), pp. 29-35, Urbana-Champaign, Aug 15-18, 2004. Download
  • A. S. Kashyap, C. Vemulapally and H. A. Mantooth, “VHDL-AMS modeling of silicon carbide power semiconductor devices,” IEEE Workshop on Computers in Power Electronics (COMPEL ’04), Urbana-Champaign, pp. 50-54, Aug 15-18, 2004. Download
  • A. S. Kashyap, T. R. McNutt, T. Funaki and H. A. Mantooth, “High temperature characterization and compact modeling of silicon carbide JFETs,” India International Conference on Power Electronics (IICPE'04), 8 pgs., Mumbai, India, Dec. 20-21, 2004. Download
  • T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, F. D. Barlow, H. A. Mantooth, T. Kimoto and T. Hikihara, "SiC JFET dc characteristics under extremely high ambient temperatures,” IEICE Electron. Express, vol. 1, no. 17, pp. 523-527, December 10, 2004. Download

2003

  • A. Hefner, T. McNutt, D. Berning, R. Singh, A. Akuffo, “The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes,” Proc. of International Conference on Silicon Carbide and Related Materials (ICSCRM) 2003, to appear in Materials Research
    • Society, Spring 2004, Lyon, France, October 2003. Download
  • T. McNutt, A. Hefner, A. Mantooth, D. Berning, S.H. Ryu, “Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence," Conf. Rec. of IEEE Power Electronics Specialists Conf. (PESC), pp. 217-226, Acapulco, Mexico, June 2003. Download
  • K. Speer, T. McNutt, A. Lostetter, A. Mantooth, K. Olejniczak, “A Novel High Frequency Silicon Carbide, SIT-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics,” Proceedings of the 2003 European Conference on Power Electronics and Applications, 6 pgs., paper 1092, Toulouse, France, September 2003. Download
  • T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh, “Compact Models for Silicon Carbide Power Devices,” Proc. of International Semiconductor Device Research Symposium (ISDRS) 2003, pp. 472-473, Washington, D.C., December 2003. Download
  • R. Singh, A. Hefner, T. McNutt, “Reliability Concerns in Contemporary SiC Power Devices,” Proc. of the International Semiconductor Device Research Symposium (ISDRS) 2003, pp. 368-369, Washington, D.C., December 2003. Download
  • A. S. Kashyap, S. D. Magan Lal, T. R. McNutt, A. B. Lostetter, and H. A. Mantooth, “Testing and modeling electrical characteristics of novel silicon carbide (SiC) static induction transistors (SITs),” In Journal of the Arkansas Academy of Science, Arkansas Academy of Science Annual Meeting, University of Arkansas, Fayetteville, Arkansas, pp. 209-215, April 2003. Download

2002

  • T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, R. Singh, “Parameter Extraction Sequence for SiC Schottky, Merged PiN Schottky, and PiN Power Diode Models,” Conf. Rec. of IEEE Power Electronics Specialists Conf (PESC), pp. 1269-1276, Cairns, Australia, June 2002. Download

2001

  • T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, R. Singh, “Silicon Carbide PiN, Schottky, and Merged PiN-Schottky Power Diode Models Implemented in the Saber Circuit Simulator,” Conf. Rec. of IEEE Power Electronics Specialists Conf. (PESC), pp. 2103 –2108, Vancouver, British Columbia, Canada, June 2001. Download
  • A. Hefner, D. Berning, T. McNutt, A. Mantooth, J. Lai, R. Singh, J. Palmour, "Characterization and Modeling of Silicon Carbide Power Devices," Proceedings of the International Semiconductor Device Research Symposium (ISDRS) 2001, pp. 568-571, Washington, D.C., December 2001. Download