Certify Download
Certify is an optimization tool that has been developed by the team which works with the models available on this page. Each model has an extraction recipe for Certify, and will be made available with the model download.
Author: Weifeng Li and Yongfeng Feng
Email: wxl002@uark.edu, yfeng@uark.edu
Device Models
The following device models have been developed by the NCREPT team over the years, and are now free to download. The models are free to use, and if you like them, a word of appreciation included as comments would be appreciated by the team. We would love to hear any comments, issues, bugs or new features that could be added to the models.
Behavioral Diode Model
A behavioral model based on the physics based Diode Model available in Saber (Unified Diode Model) has been developed. The model describes the on-state and reverse breakdown DC behavior as well as reverse recovery transient switching operation of a diode. The behavioral model implements the diode equations by simplifying the Unified Diode Model’s level of detail while incorporating important effects in it. The main advantage of using the behavioral model is its very fast simulation time, and for large system simulations with a large number of devices, simulation time of a model is a critical resource. The behavioral model can be used while maintaining a tolerable degree of accuracy to perform top level simulation of systems where individual device level of detail is not necessary, and time is of critical importance.
Author: Mihir Mudholkar
Email: mmudhol@uark.edu
DC TEST SETUP
The DC setup is a simple voltage sweep with a DC voltage source and the diode in series with a limiting resistor.
DC OUTPUT (Id vs. Vd)
REVERSE RECOVERY TEST SETUP
The reverse recovery mechanism has been tested using a step voltage setup as shown in Fig. 3. The reverse recovery setup is similar to the dc setup with the difference being that a step voltage source is used for reverse recovery. A voltage of +10 V is applied across the diode and the series resistance and a positive current is flowing across the diode. Then the voltage in the source is suddenly stepped down to -5 V. As a result, the diode switches instantly thereby generating the diode reverse recovery effect.
REVERSE RECOVERY OUTPUT (Id and Vd vs. t)
REVERSE RECOVERY ZOOMED OUTPUT (Id vs. t)
Silicon Carbide JFET
A model for SiC JFET has been developed. It is a physics based model. The model code, extraction recipe can be found in the model Readme below.
Author: Avinash Kashyap
Email: akashya@uark.edu
Silicon Carbide MOSFET
A model for SiC MOSFET has been developed. It is a physics based model. The model code, extraction recipe can be found in the model Readme below.
Author: Daniel Hotz
Email: dhotz@uark.edu
Silicon Carbide Thyristor
The Thyristor model is a level 3 physics based model. The model is accurate for device properties such as capacitances, lifetimes, etc. so it predicts the switching behavior with high fidelity. The lumped charge method, known for its high accuracy in modeling bipolar devices has been used to derive the model equations. More details on the model, including the parameter extraction guide etc. can be found in the model readme below.
Author: Osama Saadeh
Email: o_saadeh@yahoo.com
Unified Diode Model
A physics based Unified Diode Model (Schottky, PNP, NPN) has been developed in MAST. However, due to proprietary considerations, the MAST model code is not open for public viewing. The diode model has been ported into Modlyng CMX and can be exported in Verilog-A, VHDL using Modlyng. The model CMX and readme is available for download.
Author: Mihir Mudholkar
Email: mmudhol@uark.edu